The NDS8425 is an N-channel MOSFET from Fairchild Semiconductor that uses the Power Trench process for extremely low RDS(ON) and low gate charge. It can be used in DC/DC converters and load switches.
The document describes the Fairchild Semiconductor NDS8425, a single N-Channel MOSFET produced using the advanced PowerTrench process. It is designed to minimize on-state resistance while maintaining low gate charge for superior switching performance in DC/DC converters and load switch applications.
Key specifications include a drain-source voltage rating of 20V, a continuous drain current of 7.4A at 25°C, and an operating junction temperature range from -55°C to +150°C. The device is available in a widely used surface mount package with specific thermal resistance values provided for various mounting conditions.
| Drain-Source Voltage (Vss) | 20 V |
|---|---|
| Gate-Source Voltage (Vgs) | +8 V |
| Operating Junction Temperature Range | -55 to +150 °C |
The maximum continuous drain current is 7.4 A.
The maximum power dissipation for single operation is 2.5 W.
The operating and storage junction temperature range is -55 to +150 °C.