This document describes the features and characteristics of the NDS8434 single P-channel enhancement mode field effect transistor, released in June 1996. These transistors are produced using Fairchild's proprietary high cell density DMOS technology, which minimizes on-state resistance and provides superior switching performance. They are particularly suitable for low voltage applications such as notebook computer power management and other battery powered circuits, requiring fast switching, low in-line power loss, and resistance to transients.
This document is a technical datasheet for the Fairchild Semiconductor NDS8434, a single P-Channel Enhancement Mode Field Effect Transistor. The device utilizes proprietary DMOS technology to minimize on-state resistance and provide superior switching performance, making it suitable for low voltage applications such as notebook computer power management.
| Drain-Source Voltage | -20 V |
|---|---|
| Gate-Source Voltage | -8 V |
| Continuous Drain Current | 6.5 A |
| Maximum Power Dissipation | 25 W |
| Operating Temperature Range | -55 to 150 °C |
The device supports a continuous drain current of -6.5 A and a pulsed drain current of -20 A.
The maximum power dissipation rating is 25 W.
The device operates and stores within a temperature range of -55 to 150 °C.