NDS356AP is a P-Channel logic level enhancement mode power field effect transistor, suitable for low voltage applications such as notebook computer power management, portable electronics, and other battery powered circuits, with features including fast high-side switching and low in-line power loss.
The document describes the Fairchild NDS356AP, a P-channel logic level enhancement mode power field effect transistor produced using proprietary DMOS technology. It is designed for low voltage applications such as notebook computer power management and portable electronics where fast high-side switching and low in-line power loss are required.
| Drain-Source Voltage | -30 V |
|---|---|
| Package Type | SuperSOT-3 |
| Operating Temperature Range | -55 to 150 °C |
The maximum power dissipation is 0.5 W.
The operating and storage temperature range is -55 to 150 °C.