NDS9400A is a P-channel enhancement mode power field effect transistor produced by Fairchild. It has extremely low RDS(ON) and high current handling capability. It is suitable for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss and resistance to transients are needed.
This document is a technical datasheet for the Fairchild Semiconductor NDS9400A, a Single P-Channel Enhancement Mode Field Effect Transistor. The device utilizes proprietary high cell density DMOS technology to minimize on-state resistance and provide superior switching performance.
The transistor is designed for low voltage applications such as notebook computer power management and battery-powered circuits where fast switching and low in-line power loss are required. It features a maximum continuous drain current of 3.4A and a breakdown voltage of -30V.
| Drain-Source Voltage (V_DSS) | -30 V |
|---|---|
| Gate-Source Voltage (V_GSS) | +20 V |
| Operating Temperature Range | -55 to 150 °C |
The device supports a continuous drain current of -3.4 A and a pulsed drain current of +10 A.
The maximum power dissipation is rated at 25 W under standard conditions.
The device operates and stores within a temperature range of -55 to 150 °C.