FDZ663P P-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET, the maximum resistance of this product is 134 mΩ, it occupies PCB area 0.64 mm2, the package height is less than 0.4 mm, it is a low power, miniaturization, high performance MOSFET.
This document is a technical datasheet for the Fairchild Semiconductor FDZ663P, a P-Channel MOSFET utilizing the company's advanced 1.5 V PowerTrench process and Thin WLCSP packaging. The device features an ultra-low profile of less than 0.4 mm height and occupies only 0.64 mm² of PCB area.
The device supports a continuous drain current of -2.7 A when the ambient temperature is 25°C.
The maximum drain to source voltage is -20 V, and the maximum gate to source voltage is +8 V.
The device occupies a packaging area measuring 0.8x0.8 mm².