This document describes Fairchild Semiconductor's FDS9953A Dual 30V P-Channel PowerTrench MOSFET. The product is optimized for power management applications requiring a wide range of gate drive voltage ratings (4.5V - 25V), and it is suitable for power management, load switch, and battery protection applications. Its features include low gate charge, fast switching speed, extremely low RDS(ON), and high power and current handling capability.
This document is a technical datasheet for the Fairchild Semiconductor FDS9953A, a rugged dual P-channel MOSFET utilizing advanced PowerTrench technology. The device is optimized for power management applications such as load switching and battery protection, offering a drain-source voltage rating of -30V.
| Drain-Source Voltage | -30 V |
|---|---|
| Continuous Drain Current | +2.9 A |
| Power Dissipation for Dual Operation | 2 W |
| Operating Junction Temperature Range | -55 to +150 °C |
| Thermal Resistance (Junction-to-Ambient) | 78 °C/W |
The device supports a continuous drain current of +2.9 A and a pulsed drain current of +10 A.
The maximum power dissipation for dual operation is 2 W.