This document describes the features and characteristics of the FDS8884 N-Channel PowerTrench MOSFET. It has been specifically designed to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It is optimized for low gate charge, low rDS(on), and fast switching speed.
This document is a datasheet for the Fairchild Semiconductor FDS8884, an N-Channel MOSFET designed to improve the efficiency of DC/DC converters using synchronous or conventional switching PWM controllers. The device features low gate charge, low on-resistance, and fast switching speed.
| Drain to Source Voltage | 30 V |
|---|---|
| Continuous Drain Current | 8.5 A |
| Pulsed Drain Current | 40 A |
| Power Dissipation | 25 W |
| Operating Temperature | -55 to 150 C |
| Package Type | SO-8 |
Yes, the device is RoHS compliant.
The thermal resistance from junction to case is 25 °C/W.