The FDS8878 is an N-channel power MOSFET with low on-resistance, low gate charge, and fast switching speed. It has been specifically designed to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
The FDS8878 is an N-Channel MOSFET designed to improve the efficiency of DC/DC converters using synchronous or conventional switching PWM controllers. It features high-performance trench technology for extremely low on-resistance and fast switching speeds. The device is RoHS compliant and available in an SO-8 package.
| Drain to Source Voltage | 30 V |
|---|---|
| Continuous Drain Current (Ta = 25°C, Vgs = 10V) | 10.2 A |
| Continuous Drain Current (Ta = 25°C, Vgs = 4.5V) | 9.3 A |
| Power Dissipation | 25 W |
| Operating and Storage Temperature | -55 to 150 °C |
| Package Type | SO-8 |
| Drain to Source On Resistance (Typical) | 14.0 mΩ |
The maximum continuous drain current is 10.2 A when the gate-source voltage is 10V.
Yes, the device is RoHS compliant.
The thermal resistance from junction to case is 25 °C/W.