The FDS8882 N-Channel PowerTrench® MOSFET is a high-performance device with extremely low rDS(on) and fast switching characteristics. It is designed for power conversion applications and minimizes losses.
This document is a technical datasheet for the Fairchild Semiconductor FDS8882, an N-Channel PowerTrench MOSFET designed to minimize losses in power conversion applications. The device features high performance trench technology and offers excellent switching capabilities.
Key specifications include a maximum drain current of 9 A (continuous) and 21 A (pulsed), with a typical on-resistance of 20.0 mΩ at Vgs = 10 V. It is suitable for applications such as notebook system regulators and DC/DC converters.
| Drain to Source Voltage (Vds) | 30 V |
|---|---|
| Gate to Source Voltage (Vgs) | +20 V |
| Pulsed Drain Current (Id) | 21 A |
| Power Dissipation (Ta = 25 °C) | 25 W |
| Operating Junction Temperature Range | -55 to +150 °C |
| Thermal Resistance, Junction to Case (RthJC) | 25 °C/W |
The device supports a continuous drain current of 9 A and a pulsed drain current of 21 A.
The maximum power dissipation is 25 W when the ambient temperature is 25 °C.
The device operates and stores within a junction temperature range of -55 to +150 °C.