FDS6961A is a N-Channel Logic Level MOSFET produced by Fairchild Semiconductor, which features low on-state resistance, high performance and fast switching, suitable for low voltage and battery powered applications
This document is a technical datasheet for the Fairchild Semiconductor FDS6961A, a Dual N-Channel Logic Level PowerTrench™ MOSFET. The device utilizes advanced PowerTrench process technology to minimize on-state resistance while maintaining superior switching performance, making it suitable for low voltage and battery-powered applications.
The datasheet provides comprehensive electrical characteristics including absolute maximum ratings, thermal characteristics, and typical performance curves. Key specifications include a drain-source breakdown voltage of 30 V, a continuous drain current of 3.5 A, and an on-resistance (RDS(on)) ranging from 0.076 to 0.14 ohms depending on temperature and gate voltage conditions.
| Drain-Source Voltage (VDS) | 30 V |
|---|---|
| Gate-Source Voltage (VGS) | +20 V |
| Pulsed Drain Current (IDM) | 14 A |
| Operating Temperature Range | -55 to 150 °C |
The maximum continuous drain current (ID) is 3.5 A.
The device operates and stores within a range of -55 to 150 °C.