This document introduces the FDS4501H Complementary PowerTrench Half-Bridge MOSFET produced by Fairchild Semiconductor Corporation in May 2001. This product utilizes Fairchild's advanced PowerTrench process to minimize on-state resistance and maintain low gate charge for superior switching performance. It is suitable for applications such as DC/DC converters, power management, load switches, and battery protection.
The FDS4501H is a complementary MOSFET half-bridge device produced using Fairchild's advanced PowerTrench process. It is designed to minimize on-state resistance while maintaining low gate charge for superior switching performance. The device integrates an N-Channel MOSFET (Q1) and a P-Channel MOSFET (Q2) in a single package.
| Drain-Source Voltage (Q1) | 30 V |
|---|---|
| Drain-Source Voltage (Q2) | -20 V |
| Continuous Drain Current (Q1) | 9.3 A |
| Continuous Drain Current (Q2) | 5.6 A |
| Power Dissipation (Single Operation) | 25 W |
| Operating Junction Temperature Range | -55 to +150 °C |
| Thermal Resistance, Junction-to-Ambient | 50 °C/W |
| Thermal Resistance, Junction-to-Case | 25 °C/W |
The device is suitable for DC/DC converters, power management, load switches, and battery protection.
The maximum continuous drain current for the N-Channel MOSFET (Q1) is 9.3 A.
The operating and storage junction temperature range is from -55 to +150 °C.