FDS4559 is a MOSFET device produced by Fairchild Semiconductor Corporation using PowerTrench process. It features low on-state resistance and low gate charge, and is suitable for applications such as DC/DC converters, power management and LCD backlight inverters.
The document describes the Fairchild FDS4559, a complementary MOSFET device produced using the advanced PowerTrench process. It is designed to minimize on-state resistance while maintaining low gate charge for superior switching performance.
Key applications include DC/DC converters, power management systems, and LCD backlight inverters. The datasheet provides absolute maximum ratings, electrical characteristics, thermal data, and typical performance curves for both the N-Channel (Q1) and P-Channel (Q2) components.
| Drain-Source Voltage (Voss) | +/- 60 V |
|---|---|
| Gate-Source Voltage (Vass) | +/- 20 V |
| Power Dissipation (Dual Operation) | 2 W |
| Operating Junction Temperature Range | -55 to +175 °C |
The device is suitable for DC/DC converters, power management, and LCD backlight inverters.
The N-Channel (Qi) supports 4.5 A and the P-Channel (Q2) supports 3.5 A.
The maximum power dissipation for dual operation is 2 W.