FDS6673BZ is a P-channel MOSFET produced by Fairchild Semiconductor using the advanced Power Trench process. It has extremely low rDS(on) and is suitable for notebook computers and portable battery packs.
This document is a technical datasheet for the Fairchild Semiconductor FDS6673BZ, a P-Channel PowerTrench MOSFET designed for power management applications such as load switching in computers and portable battery packs.
The device features RoHS compliance, high performance trench technology for low on-state resistance, and an extended voltage range suitable for battery applications. It includes specific electrical characteristics, thermal data, and typical performance curves.
| Drain to Source Voltage | -30 V |
|---|---|
| Gate to Source Voltage | +25 V |
| Drain Current (Continuous) | -14.5 A |
| Power Dissipation (Single Operation) | 25 W |
| Operating Temperature Range | -55 to 150 °C |
| Thermal Resistance (Junction to Ambient) | 50 °C/W |
The device has an HBM ESD protection level of 6.5kV typical.
Yes, the device is RoHS compliant.