The document describes the features and characteristics of a product named APT12057JLL, including important parameters such as drain-source breakdown voltage, on-state drain current, drain-source on-state resistance, zero gate voltage drain current, etc.
This document is a datasheet for the Advanced Power Technology APT12057JLL, an N-Channel enhancement mode power MOSFET. The device features low conduction and switching losses due to its patented metal gate structure (IsoTOP®) and is available in a SOT-227 package.
Key specifications include a drain-source voltage rating of 1200 Volts and a continuous drain current of 19 Amps at 25°C. The datasheet provides maximum ratings, static electrical characteristics such as on-state resistance (0.570 Ohms typical), dynamic characteristics including gate charge values, source-drain diode parameters, and thermal characteristics.
| Drain-Source Voltage | 1200 Volts |
|---|---|
| Continuous Drain Current @ Tg = 25°C | 19 Amps |
| Total Power Dissipation @ Tg = 25°C | 520 Watts |
| Gate Threshold Voltage (Typical) | 3 to 5 Volts |
The APT12057JLL has a maximum drain-source voltage rating of 1200 Volts.