This document provides technical information about the APT12060 series products, including maximum ratings and static electrical characteristics. APT12060 is a power MOSFET with a rated voltage of 1200V, a rated current of 20A, and an on-state resistance of 0.600Ω.
This document is a datasheet for the Advanced APT12060B2VR and APT12060LVR Power MOS V devices. These are high voltage N-Channel enhancement mode power MOSFETs designed to minimize the JFET effect, increase packing density, and reduce on-resistance. The devices are available in T-MAX (B2) or TO-264 (L) packages and are 100% avalanche tested.
| Drain-Source Voltage | 1200 Volts |
|---|---|
| Continuous Drain Current | 20 Amps |
| Pulsed Drain Current | 80 Amps |
| Drain-Source On-State Resistance | 0.600 Ohms |
| Total Power Dissipation | 625 Watts |
| Operating Junction Temperature Range | -55 to 150 °C |
| Input Capacitance | 7580 pF |
| Junction to Case Thermal Resistance | 0.20 °C/W |
The maximum drain-source voltage is 1200 Volts.
The typical drain-source on-state resistance is 0.600 Ohms.
Yes, the devices are 100% avalanche tested.