The document describes the features and characteristics of a product, including drain-source breakdown voltage, on-state drain current, drain-source on-state resistance, zero gate voltage drain current, and gate-source leakage current.
This document provides technical specifications for the Advanced Power Technology APT10090BLL and APT10090SLL, which are low loss, high voltage N-Channel enhancement mode power MOSFETs. These devices feature a patented metal gate structure designed to combine lower conduction and switching losses with exceptionally fast switching speeds.
| Drain-Source Voltage | 1000 Volts |
|---|---|
| Continuous Drain Current | 12 Amps |
| Total Power Dissipation | 300 Watts |
| Operating Junction Temperature Range | -55 to 150 °C |
| Input Capacitance | 2040 pF |
The total power dissipation is rated at a maximum of 300 watts when the case temperature is 25°C.
The device can operate and be stored within a junction temperature range of -55 to 150 °C.