The document describes the features and test conditions of a product, including drain-source breakdown voltage, on-state drain current, drain-source on-state resistance, zero gate voltage drain current, etc.
This document provides technical specifications for the APT10090BFLL and APT10090SFLL, which are low loss, high voltage N-Channel enhancement mode power MOSFETs from Advanced Power Technology. These devices utilize a patented metal gate structure to achieve lower conduction and switching losses along with fast switching speeds.
| Drain-Source Voltage | 1000 Volts |
|---|---|
| Continuous Drain Current | 12 Amps |
| Pulsed Drain Current | 48 Amps |
| Total Power Dissipation | 300 Watts |
| Operating Junction Temperature Range | -55 to 150 °C |
| Drain-Source On-State Resistance | 0.90 Ohms |
| Input Capacitance | 204 pF |
The operating and storage junction temperature range is -55 to 150 °C.
The total power dissipation is 300 Watts.