APT10088HVR is a N-channel enhancement mode power MOSFET with a 1000V breakdown voltage and a maximum continuous current of 11A. This product uses Power MOS V technology to minimize JFET effect, increase packing density and reduce on-resistance.
This document is a datasheet for the APT10088HVR, a high voltage N-Channel enhancement mode power MOSFET. The device features a new generation Power MOS V® technology designed to minimize the JFET effect, increase packing density, and reduce on-resistance. It is available in a popular TO-258 package.
| Drain-Source Voltage | 1000 Volts |
|---|---|
| Continuous Drain Current | 11 Amps |
| Pulsed Drain Current | 44 Amps |
| Total Power Dissipation | 250 Watts |
| Operating Junction Temperature Range | -55 to 150 C |
| Drain-Source On-State Resistance | 0.880 Ohms |
| Package Type | TO-258 |
The maximum continuous drain current is 11 Amps when the temperature is 25°C.
The total power dissipation is 250 Watts at a temperature of 25°C.
The operating and storage junction temperature range is from -55 to 150 C.