Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.
This document is a technical datasheet for the APT10086SVR, a new generation of high voltage N-Channel enhancement mode power MOSFETs. The device features minimized JFET effect and optimized gate layout to achieve faster switching speeds and reduced on-resistance.
| Drain-Source Voltage | 1000 Volts |
|---|---|
| Continuous Drain Current | 13 Amps |
| Pulsed Drain Current | 52 Amps |
| Drain-Source On-State Resistance | 0.86 Ohms |
| Package Type | D°PAK Package |
The device supports a continuous drain current of 13 Amps when the temperature is 25°C.
The total power dissipation rating is 370 Watts when the ambient temperature is 25°C.
The device operates and stores within a junction temperature range of -55 to 150 C.