This document describes the features and characteristics of G D S products, including drain-source breakdown voltage, drain-source on-state resistance, and zero gate voltage drain current.
This document provides technical specifications and characteristics for the APT10057WVR, a new generation of high voltage N-Channel enhancement mode power MOSFETs. The device features minimized JFET effect, increased packing density, reduced on-resistance, and optimized gate layout for faster switching speeds.
| Total Power Dissipation | 450 Watts |
|---|---|
| Package Type | TO-267 Package G |
The maximum continuous drain current is 17.3 Amps when the temperature is 25°C.
The total power dissipation is rated at 450 Watts when the temperature is 25°C.
The device operates and stores within a junction temperature range of -55 to 150 C.