This document is the datasheet of APT10086, which introduces the static electrical characteristics, maximum ratings, repetitive non-repetitive surge current, repetitive surge energy and single pulse surge energy of the product.
This document provides technical specifications for the APT10086BLC and APT10086SLC, which are low gate charge, high voltage N-Channel enhancement mode power MOSFETs. These devices feature identical specifications available in TO-247 or Surface Mount D?PAK packages, offering optimized gate layout for fast switching speeds.
| Drain-Source Voltage | 1000 Volts |
|---|---|
| Continuous Drain Current | 13 Amps |
| Pulsed Drain Current | 52 Amps |
| Total Power Dissipation | 370 Watts |
| Operating Junction Temperature Range | -55 to 150 C |
| Drain-Source On-State Resistance | 0.860 Ohms |
| Gate Threshold Voltage | 3 to 5 Volts |
| Input Capacitance | 2800 pF |
| Total Gate Charge | 95 nC |
The device supports a continuous drain current of 13 Amps when the temperature is 25°C.
The device operates and stores within a junction temperature range of -55 to 150 C.
The MOSFET can dissipate a maximum of 370 Watts when the temperature is 25°C.