APT10086BVFR is a high voltage N-channel enhancement mode power MOSFET produced by ON Semiconductor. It has low voltage drop, fast recovery body diode, 100% avalanche testing and other features.
This document provides technical specifications for the Advanced APT10086BVFR, a high voltage N-Channel enhancement mode Power MOSFET. The device utilizes a new technology to minimize the JFET effect and reduce on-resistance while achieving faster switching speeds.
| Drain-Source Voltage | 1000 Volts |
|---|---|
| Continuous Drain Current | 13 Amps |
| Pulsed Drain Current | 52 Amps |
| Total Power Dissipation | 370 Watts |
| Operating Junction Temperature Range | -55 to 150 C |
| Drain-Source On-State Resistance | 0.86 Ohms |
| Package Type | TO-247 |
The maximum drain-source voltage is 1000 Volts.
The continuous drain current is 13 Amps at Tg = 25°C.
Yes, the device features a fast recovery body diode and is 100% avalanche tested.