FDP8N50NZU / FDPF8N50NZU N-Channel MOSFET is a high-performance power field-effect transistor produced by Fairchild Semiconductor Corporation. The device has low on-state resistance, low gate capacitance and fast switching characteristics, and is suitable for applications such as high-efficiency switching mode power supplies and active power factor correction.
This document is a datasheet for the Fairchild FDP8N50NZU and FDPF8N50NZU N-Channel enhancement mode power field effect transistors. These devices utilize Fairchild's proprietary UniFET-II technology, designed for high efficiency switching mode power supplies and active power factor correction applications. The datasheet provides maximum ratings, electrical characteristics, and typical performance curves for both the TO-220 and TO-220F packages.
| Input Capacitance | 565 - 735 pF |
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The device supports a continuous drain current of 6.5 A when the temperature is 25°C.
The MOSFET can withstand a single pulsed avalanche energy of up to 80 mJ.
The device operates and stores safely within a temperature range of -55 to +150 °C.