FDP8N60ZU / FDPF8N60ZUT N-Channel MOSFET is a N-Channel enhancement mode power field effect transistor manufactured by Fairchild Semiconductor Corporation. This product has the following features: RDS(on)=1.15mΩ (Typ.) @ VGS=10V, ID=3.25A; Low gate charge (Typ. 20nC); Low Crss (Typ. 10pF); Fast switching; 100% avalanche tested; Improved dv/dt capability; RoHS compliant.
This document provides a comprehensive technical overview of the Fairchild FDP8N60ZU and FDPF8N60ZUT N-Channel MOSFETs. These devices utilize proprietary planar stripe DMOS technology and are designed for high-efficiency switched mode power supplies and active power factor correction applications. Key features include low gate charge, fast switching speeds, and 100% avalanche testing.
| Total Gate Charge | 20 nC (Typ.) |
|---|---|
| Package Type | TO-220 / TO-220F |
Yes, the document lists RoHS compliant as a feature.
The typical total gate charge is 20 nC.