This document describes the features and characteristics of the UniFET TM FDP18N20F / FDPF18N20FT N-Channel MOSFET, including its low on-state resistance, low gate charge, fast switching speed, and RoHS compliance. This product is suitable for high-efficiency switching mode power supplies and active power factor correction.
The document describes the FDP18N20F and FDPF18N20FT as N-Channel enhancement mode power field effect transistors produced using Fairchild's proprietary planar stripe DMOS technology. These devices are designed to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in avalanche and commutation modes.
| Power Dissipation (Tc=25°C) | 100 W |
|---|---|
| Operating and Storage Temperature Range | -55 to +150 °C |
| Thermal Resistance, Junction to Case (FDP18N20F) | 1.2 °C/W |
| Thermal Resistance, Junction to Ambient | 62.5 °C/W |
The continuous drain current at Tj=25°C is 18A, with a pulsed rating of 72A.
The FDP18N20F is in a TO-220 package, and the FDPF18N20FT is in a TO-220F package.
Yes, the document lists RoHS compliance as a feature of these devices.