This document describes the features and characteristics of the FDP12N50 / FDPF12N50T N-Channel MOSFET, including low on-state resistance, low gate charge, fast switching, 100% avalanche tested capability, etc.
This document is a datasheet for the Fairchild FDP12N50 and FDPF12N50T N-Channel enhancement mode power field effect transistors. These devices utilize Fairchild's proprietary planar stripe, DMOS technology, designed to minimize on-state resistance and provide superior switching performance for high-efficiency switched mode power supplies and active power factor correction applications. The FDP12N50 is available in a TO-220 package, while the FDPF12N50T is available in a TO-220F potted package.
| Package Types | TO-220, TO-220F |
|---|
The device operates and stores within a temperature range of -55 to +150 °C.