This document introduces the FDP090N10 N-Channel PowerTrench® MOSFET product released in January 2008. The product features a voltage of 100V, a current of 75A, and an RDS(on) of 9mΩ. It uses high-performance trench technology, with fast switching speed, low gate charge, and high power handling capability. It is suitable for applications such as DC-to-DC converters and synchronous rectification.
This document is a datasheet for the FDPO90N10, an N-Channel PowerTrench MOSFET manufactured by Fairchild Semiconductor. The device is designed for high power and current handling capabilities, specifically targeting applications such as DC to DC converters and synchronous rectification. It operates with a drain-to-source voltage rating of 100V and a continuous drain current of 75A at 85°C.
| Drain to Source Voltage | 100 V |
|---|---|
| Gate to Source Voltage | +20 V |
| Continuous Drain Current | 75 A |
| Pulsed Drain Current | 300 A |
| Operating Temperature Range | -55 to +175 °C |
| Package Type | TO-220 |
The device is suitable for DC to DC converters and synchronous rectification.
The maximum junction temperature is 175°C.
Yes, the product is RoHS compliant.