FDP10N60NZ/FDPF10N60NZ N-Channel MOSFET is a power switching device produced by Fairchild Semiconductor Corporation, with characteristics of 600V, 10A, and 0.75Ω.
This document is a technical datasheet for the FDP10N60NZ and FDPF10N60NZ N-Channel MOSFETs manufactured by Fairchild Semiconductor. These devices utilize proprietary UniFET-II stripe, DMOS technology to minimize on-state resistance and provide superior switching performance. They are designed for high-efficiency switched mode power supplies and active power factor correction applications.
| Drain to Source Voltage | 600 V |
|---|---|
| Continuous Drain Current (Tc = 25°C) | 10 A |
| Single Pulsed Avalanche Energy | 550 mJ |
| Power Dissipation Derate above 25°C | 15 W/°C |
| Operating and Storage Temperature Range | -55 to +150 °C |
| Thermal Resistance, Junction to Case (FDP10N60NZ) | 0.68 °C/W |
| Thermal Resistance, Junction to Ambient | 62.5 °C/W |
Yes, the document states that the devices are RoHS compliant.
The device is rated for an operating and storage temperature range from -55 to +150 °C.
The device can withstand a single pulsed avalanche energy of 550 mJ.