Fairchild FDP047N10 N-Channel PowerTrench MOSFET Datasheet

The FDP047N10 is a N-Channel PowerTrench® MOSFET produced by Fairchild Semiconductor Corporation, which has a low Rdson, a high switching speed, a low gate charge, a high power and current handling capability, and is RoHS compliant.


Fairchild FDP047N10 N-Channel PowerTrench MOSFET Datasheet - cover page
Brand
Fairchild
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
8
File format
PDF
File size
1003 KB
Published
11 July, 2012
Updated
30 September, 2023
MD5 checksum
25EBD1B8EA2FCA7C66616E586A1DADE3

About this manual

This document is a datasheet for the Fairchild FDP047N10, an N-Channel PowerTrench MOSFET designed for high power and current handling capabilities. The device features a 100V drain-to-source voltage rating, a continuous drain current of 164A, and a low on-state resistance of 4.7mΩ. It is optimized for applications such as DC to DC converters and synchronous rectification.

What's inside

  • Description
  • Maximum Ratings
  • Thermal Characteristics
  • Electrical Characteristics
  • Typical Performance Characteristics
  • Mechanical Dimensions
  • Package Marking
  • Ordering Information

Specifications

Drain to Source Voltage100 V
Continuous Drain Current (Tc = 25°C)164 A
On-State Resistance4.7 mΩ
Operating Temperature Range-55 to +175 °C
Package TypeTO-220

Frequently asked questions

What is the maximum continuous drain current at 25°C?

The maximum continuous drain current at 25°C is 164A.

What are the recommended applications for this MOSFET?

Recommended applications include DC to DC converters and synchronous rectification.

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