FDP12N50NZ / FDPF12N50NZ N-Channel MOSFET is a N-channel enhancement mode power field effect transistor produced by Fairchild using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.
This document is a datasheet for the Fairchild FDP12N50NZ and FDPF12N50NZ N-Channel enhancement mode power field effect transistors. These devices utilize proprietary planar stripe, DMOS technology and are designed for high energy pulse in the avalanche commutation mode, making them suitable for switched mode power supplies and active power factor correction applications.
| Drain to Source Voltage | 500 V |
|---|---|
| Gate to Source Voltage | +/- 25 V |
| Continuous Drain Current (25°C) | 11.5 A |
| Single Pulsed Avalanche Energy | 560 mJ |
| Operating Temperature Range | -55 to +150 °C |
| Package Type | TO-220 / TO-220F |
The maximum continuous drain current is 11.5 A when the temperature is 25°C.
The maximum drain to source voltage rating is 500 V.
The maximum operating and storage temperature range is -55 to +150 °C.