FDP150N10A_F102 N-Channel PowerTrench® MOSFET is a high-performance, low-resistance MOSFET that uses Fairchild Semiconductor's advanced PowerTrench process to minimize on-state resistance while maintaining superior switching performance.
The document provides a comprehensive technical overview of the FDP150N10A_F102, an N-Channel PowerTrench MOSFET manufactured by Fairchild Semiconductor. Key features include a typical on-resistance (RDS(on)) of 12.5mΩ at VGS = 10V and ID = 50A, along with fast switching speeds enabled by high-performance trench technology.
| Drain to Source Voltage (VDSS) | 100 V |
|---|---|
| Gate to Source Voltage (VGSS) | ±20 V |
| Continuous Drain Current (TC = 25°C) | 50A |
| Typical On-Resistance (RDS(on)) | 12.5mΩ |
| Operating Temperature Range | -55 to +175°C |
It is suitable for DC-DC converters, synchronous rectification in telecommunication PSUs, battery chargers, AC motor drives, and uninterruptible power supplies.
The device is packaged in a TO-220 case.