FDP12N60NZ / FDPF12N60NZ N-Channel MOSFET is a N-channel enhancement mode power field effect transistor produced by Fairchild Semiconductor Corporation. Its features are RDS(on) = 0.53 ( Typ.)@ VGS = 10V, ID = 6A, low gate charge ( Typ. 26nC), low Crss ( Typ. 12pF), fast switching, 100% avalanche tested, improved dv/dt capability, ESD improved capability, RoHS compliant
This document is a datasheet for the Fairchild FDP12N60NZ and FDPF12N60NZ UniFET-N-Channel MOSFETs, published in September 2010. These devices feature 600V drain-to-source voltage, 12A continuous drain current, and low gate charge, utilizing Fairchild's proprietary planar stripe DOMS technology. They are designed for high-efficiency switched mode power supplies and active power factor correction applications.
| Package Type | TO-220 / TO-220F |
|---|
The typical total gate charge is 26nC.
Yes, the document states they are RoHS compliant.