FDP100N10 N-Channel PowerTrench® MOSFET is a low on-resistance power MOSFET with fast switching speed, low gate charge, extremely low RDS(on), high power and current handing capability. It is suitable for DC to DC converters and synchronous rectification applications.
This document is a technical datasheet for the Fairchild Semiconductor FDP100N10, an N-Channel PowerTrench MOSFET. The device features a 100V drain-to-source voltage rating and a continuous current capability of 75A at 25°C. It utilizes advanced trench technology to achieve extremely low on-state resistance (Rds(on)) while maintaining superior switching performance.
| Drain to Source Voltage | 100 V |
|---|---|
| Gate to Source Voltage | +20 V |
| Continuous Drain Current (Tj = 25°C) | 75 A |
| Pulsed Drain Current | 300 A |
| On-Resistance (Typ.) @ Vgs=10V, Id=75A | 2 mΩ |
| Operating and Storage Temperature Range | -55 to +175 °C |
| Package Type | TO-220AB |
The device supports a continuous drain current of 75 A when the junction temperature is 75°C.
The component operates and stores within a temperature range of -55 to +175 °C.
The MOSFET can handle a pulsed drain current of 300 A.