FDP2614 is a 200V N-channel power MOSFET manufactured by Fairchild Semiconductor. Its features include low on-state resistance (RDS(on)) and fast switching speed. This product is suitable for PDP applications.
This document provides design specifications and electrical characteristics for the FDP2614, an N-channel MOSFET produced using Fairchild Semiconductor's advanced PowerTrench process. The device is designed to minimize on-state resistance while maintaining superior switching performance, making it suitable for PDP applications.
Key features include a maximum continuous drain current of 62A at 25°C, fast switching speed, low gate charge, and RoHS compliance. The datasheet details absolute maximum ratings, thermal characteristics, electrical parameters such as capacitance and transconductance, and provides mechanical dimensions for the TO-220 package.
| Pulsed Avalanche Energy | 145 mJ |
|---|---|
| Package Type | TO-220 |
The device supports a continuous drain current of 62 A when the temperature is 25°C.
The maximum power dissipation rating is 260 W at a temperature of 25°C.
The device operates and stores within a temperature range from -55 to +150 °C.