This document describes the features and characteristics of the FDP22N50N N-Channel MOSFET from April 2009.
This document is a technical datasheet for the Fairchild FDP22N50N, an N-channel enhancement mode power field effect transistor. The device utilizes proprietary planar stripe DMOS technology to minimize on-state resistance and provide superior switching performance.
Key specifications include a drain-to-source voltage rating of 500V and a continuous drain current of 22A at 25°C. The datasheet provides comprehensive electrical characteristics, such as gate charge, capacitance values, and thermal resistance, along with typical performance graphs and mechanical dimensions for the TO-220 package.
| Drain to Source Voltage | 500 V |
|---|---|
| Continuous Drain Current (25°C) | 22 A |
| Package Type | TO-220 |
| Operating Temperature Range | -55 to +150 °C |
| Total Gate Charge (Typical) | 49 nC |
The device supports a maximum continuous drain current of 22 A when the temperature is 25°C.
The device can operate and be stored within a temperature range of -55 to +150 °C.