This document describes an N-Channel PowerTrench MOSFET with a voltage rating of 30V, current rating of 21A, and maximum on-resistance of 9.5 mΩ. It features advanced packaging and silicon technology for low on-resistance and high efficiency. The MOSFET is suitable for applications such as synchronous buck converters for notebook Vcore and server, notebook battery packs, and load switches.
This document is a technical datasheet for the Fairchild Semiconductor FDMS8888, an N-Channel PowerTrench MOSFET. The device is designed to minimize losses in power conversion applications by combining advancements in silicon and package technologies to offer low on-resistance while maintaining excellent switching performance.
The datasheet provides comprehensive electrical characteristics, including maximum ratings for drain current (21A continuous), breakdown voltage (30V), and operating temperature ranges (-55°C to +150°C). It also details typical characteristics such as gate charge, capacitance, and thermal resistance, alongside application examples like synchronous buck converters for notebook Vcore and server applications.
| Drain to Source Voltage (Vds) | 30 V |
|---|---|
| Continuous Drain Current (Package limited) | 21 A |
| Operating and Storage Junction Temperature Range | -55 to +150 °C |
| Power Dissipation (Ta = 25°C) | 42 W |
| Thermal Resistance, Junction to Case | 3.3 °C/W |
Yes, the document states that the product is RoHS Compliant.
The device supports a continuous drain current of 21 A when the case temperature is maintained at 25 °C.
The MOSFET is rated to operate and store within a junction temperature range of -55 to +150 °C.
The component can withstand a single pulse avalanche energy of 54 mJ under specified test conditions.