FDMS86300DC N-Channel Dual CoolTM Power Trench® MOSFET is a high performance N-Channel MOSFET with extremely low on-resistance(3.1 mΩ), which can be applied to DC/DC converters, telecom secondary side rectifiers and other scenarios.
This document is a technical datasheet for the Fairchild Semiconductor FDMS86300DC, an N-Channel Dual Cool Power Trench MOSFET. The device features an 80V drain-to-source voltage rating and a continuous drain current of up to 60A (package limited) at 25°C. It utilizes advanced Power Trench technology to achieve extremely low on-resistance (ρDS(on)) of 3.1 mΩ, making it suitable for high-performance applications.
| Drain to Source Voltage (VDS) | 80 V |
|---|---|
| Continuous Drain Current (Package Limited) | 60 A |
| Static Drain to Source On Resistance (ρDS(on)) | 3.1 mΩ |
| Operating Junction Temperature Range | -55 to +150 °C |
| Package Type | Dual Cool™ Power Trench PQFN |
It is designed for synchronous rectifiers in DC/DC converters, telecom secondary side rectification, and high-end server/workstation Vcore low-side applications.
Yes, the datasheet explicitly states that the product is RoHS Compliant.