The FDMS86500L N-Channel PowerTrench® MOSFET is a low on-resistance, high performance N-channel MOSFET, designed for a variety of DC/DC converter applications.
The document describes the Fairchild Semiconductor FDMS86500L, an N-Channel PowerTrench MOSFET optimized for low gate charge and fast switching speed. It is specifically engineered to improve efficiency in DC/DC converter applications by minimizing switch node ringing.
Key features include advanced package design (Power 56), a next-generation enhanced body diode with soft recovery characteristics, and RoHS compliance. The device supports various roles such as load switches, primary switches in isolated DC-DC converters, and synchronous rectifiers.
| Drain to Source Voltage (Vds) | 60 V |
|---|---|
| Continuous Drain Current (Package limited) | 80 A |
| Continuous Drain Current (Silicon limited) | 158 A |
| Power Dissipation (Ta = 25°C) | 104 W |
| Operating Junction Temperature Range | -55 to +150 °C |
| Thermal Resistance (Junction to Case) | 1.2 °C/W |
| Total Gate Charge (Vgs=10V) | 165 nC |
| Reverse Recovery Time (Trr) | 87 ns |
Yes, the device is RoHS Compliant.
The device supports a continuous drain current of 80 A when package limited at Ta = 25°C.
The MOSFET can operate with a junction temperature ranging from -55 to +150 °C.
The maximum power dissipation is rated at 104 W when the case temperature is 25°C.