The FDMS8880 N-Channel PowerTrench® MOSFET is a high-performance MOSFET with a minimum on-resistance of 8.5 mΩ, making it suitable for synchronous buck applications in notebooks.
The FDMS8880 is an N-Channel PowerTrench MOSFET designed to minimize losses in power conversion applications. It combines advancements in silicon and package technologies to offer low on-resistance and high efficiency. The device is RoHS Compliant and features an MSL1 robust package design.
| Drain to Source Voltage | 30 V |
|---|---|
| Continuous Drain Current (Package limited) | 21 A |
| Continuous Drain Current (Silicon limited) | 51 A |
| Power Dissipation (Ta = 25°C) | 2.5 W |
| Operating and Storage Junction Temperature Range | -55 to +150 °C |
| Thermal Resistance, Junction to Case | 3.3 °C/W |
| Thermal Resistance, Junction to Ambient | 50 °C/W |
| Static Drain to Source On Resistance (Typ) | 8.5 mQ |
The device is designed for synchronous buck for Notebook Vcore and Server, Notebook Battery Pack, and Load Switch applications.
Yes, the datasheet states that the device is RoHS Compliant.
The maximum continuous drain current is 21 A when package limited at Te = 25 °C.