This document describes the features and characteristics of the FDMS86300 N-Channel PowerTrench® MOSFET. This MOSFET features advanced packaging and silicon combination for low rDS(on) and high efficiency. It also utilizes next generation enhanced body diode technology for soft recovery. The MOSFET is 100% UIL tested and RoHS compliant.
This document is a datasheet for the Fairchild Semiconductor FDMS86300, an N-Channel PowerTrench MOSFET. The device is designed to improve efficiency and minimize switch node ringing in DC/DC converters using synchronous or conventional switching PWM controllers. It features an advanced package and silicon combination for low on-resistance and high efficiency, along with a next-generation enhanced body diode engineered for soft recovery technology.
| Drain to Source Voltage | 80 V |
|---|---|
| Continuous Drain Current (Package limited) | 42 A |
| Continuous Drain Current (Silicon limited) | 122 A |
| Power Dissipation | 104 W |
| Junction to Case Thermal Resistance | 1.2 °C/W |
| Turn-On Delay Time | 31 ns |
| Total Gate Charge | 86 nC |
The device is designed for OringFET / Load Switching and DC-DC Conversion.
The operating and storage junction temperature range is -55 to +150 °C.