This document describes the features and characteristics of the FDMS86250 N-Channel PowerTrench® MOSFET. The product has a maximum rDS(on) value of 25 mΩ and 33 mΩ, and is suitable for DC-DC conversion power. It features advanced package and silicon combination for low rDS(on) and high efficiency.
This document is a datasheet for the Fairchild Semiconductor FDMS86250, an N-Channel PowerTrench MOSFET. The device is designed for DC-DC conversion applications and features a maximum drain-to-source voltage of 150 V and a continuous drain current of 20 A (package limited). It utilizes Fairchild's advanced PowerTrench process to minimize on-state resistance while maintaining superior switching performance.
The datasheet provides comprehensive electrical characteristics, including off-state breakdown voltage, on-state resistance, and switching times. It also includes typical performance curves for on-resistance, capacitance, and thermal response, along with dimensional outlines for the Power 56 package. The document notes that the device is RoHS compliant and MSL1 robust package design.
Yes, the device is RoHS compliant.
The device uses the Power 56 package.