FDMS86310 N-Channel PowerTrench® MOSFET is a low rDS(on) and high efficiency MOSFET. It is suitable for applications such as DC/DC converters.
This document is a technical datasheet for the Fairchild Semiconductor FDMS86310, an N-Channel PowerTrench MOSFET. The device is engineered for high efficiency in DC/DC converters, offering features such as soft recovery characteristics and low on-resistance (4.8 mΩ typical). It includes specifications for primary switch and synchronous rectifier applications.
| Drain to Source Voltage (VDS) | 80 V |
|---|---|
| Continuous Drain Current (Package limited) | 50 A |
| Continuous Drain Current (Silicon limited) | 105 A |
| On-Resistance (Typical) | 4.8 mΩ |
| Power Dissipation (Ta = 25°C) | 96 W |
The device is designed for use as a Primary Switch, Synchronous Rectifier, or Motor Switch.
The operating and storage junction temperature range is -55 to +150 °C.