FDMS8848NZ N-Channel PowerTrench® MOSFET is a low rDS(on) and high efficiency device launched by Fairchild Semiconductor Corporation, with a maximum current of 49A and a maximum resistance of 3.1 mOhm
The document is a technical datasheet for the Fairchild Semiconductor FDMS8848NZ, an N-Channel PowerTrench MOSFET designed to minimize losses in power conversion applications. Key features include a robust MSL1 package design and RoHS compliance.
The device offers specific electrical characteristics such as a maximum drain current of 49A (package limited) at 25°C and a static drain-to-source on-resistance ranging from 3.1 to 5.1 mΩ depending on test conditions. It is suitable for applications including computing VR & IMVP Vcore, synchronous rectifiers, POL DC/DC converters, and load switching.
| Drain to Source Voltage (VDS) | 40 V |
|---|---|
| Gate to Source Voltage (VGSS) | +20 V |
| Continuous Drain Current (Package Limited) | 49 A |
| Static Drain to Source On Resistance (Typical) | 3.1 mΩ |
| Power Dissipation (Ta = 25°C) | 2.5 W |
| Operating Junction Temperature Range | -55 to +150 °C |
The device supports a maximum continuous drain current of 49 A when the junction temperature is 25°C.
The MOSFET operates and stores within a junction temperature range of -55 to +150 °C.
The part has a maximum power dissipation of 104 W at a junction temperature of 25°C.