FDMS8670S N-Channel PowerTrench® SyncFETTM 30V, 42A, 3.5m� is a MOSFET device produced by Fairchild Semiconductor Corporation. It has low rDS(on) and high efficiency.
The FDMS8670S is an N-Channel PowerTrench SyncFET MOSFET designed to minimize losses in power conversion applications. It features a monolithic Schottky body diode and is available in a robust Power 56 package. The device is RoHS compliant and suitable for synchronous rectification in DC/DC converters, notebook Vcore/GPU low side switching, and telecom secondary side rectification.
The datasheet provides maximum ratings, electrical characteristics, and typical performance curves. Key specifications include a maximum drain-to-source voltage of 30V, a continuous drain current of 42A (package limited), and a maximum on-resistance of 5.0mΩ at Vgs = 4.5V. The document also details thermal characteristics, switching parameters, and package dimensions.
| Drain to Source Voltage | 30 V |
|---|---|
| Continuous Drain Current (Package limited) | 42 A |
| Continuous Drain Current (Silicon limited) | 116 A |
| Power Dissipation (Ta = 25°C) | 78 W |
| Operating Junction Temperature Range | -55 to +150 °C |
| Thermal Resistance, Junction to Case | 1.6 CAV |
| Drain to Source On Resistance (Typical) | 3.6 mΩ |
| Gate to Source Threshold Voltage (Typical) | 1.5 V |
The operating and storage junction temperature range is from -55 to +150 °C.
The device supports a continuous drain current of 42 A when the case temperature is 25°C.
The maximum drain to source voltage rating for this part is 30 V.
This MOSFET operates within a junction temperature range of -55 to +150 °C.