FDMS86500DC N-Channel Dual CoolTM Power Trench® MOSFET is a N-Channel MOSFET produced by Fairchild Semiconductor Corporation using Fairchild Semiconductor's advanced Power Trench® process. It has the lowest RDS(on) and excellent switching performance, which is suitable for DC/DC converter synchronous rectifier, telecommunications secondary side rectifier and high end server/workstation.
This document is a technical datasheet for the Fairchild Semiconductor FDMS86500DC, an N-Channel Dual Cool Power Trench MOSFET. The device features a 60V drain-to-source voltage rating and a continuous current capability of up to 60A (package limited) at 25°C. It is designed for applications such as synchronous rectifiers in DC/DC converters, telecom secondary side rectification, and high-end server Vcore low-side switching.
| Drain to Source Voltage (VDS) | 60 V |
|---|---|
| Gate to Source Voltage (VGS) | +20 V |
| Continuous Drain Current (Package Limited) | 60 A |
| Static Drain to Source On Resistance (Typical) | 2.3 mΩ |
| Power Dissipation (Tj = 25°C) | 125 W |
| Operating Junction Temperature Range | -55 to +150 °C |
The maximum continuous drain current limited by the silicon is 177 A when the case temperature (Tc) is 25°C.
The operating and storage junction temperature range is from -55 to +150 °C.
The thermal resistance from junction to ambient is 16 °C/W when mounted on an Aavid Thermalloy Part # 10-L41B-11 Heat Sink with 200 FPM airflow.