The FDMS86252 N-Channel PowerTrench® MOSFET is a high performance switching device that is manufactured using Fairchild Semiconductor's advanced Power Trench® process. It features low on-state resistance and high switching speed.
This document is a technical datasheet for the Fairchild Semiconductor FDMS86252, an N-Channel PowerTrench® MOSFET. The device features a maximum drain current of 46 A and a static drain-to-source on-resistance (RDS(on)) of 51 mΩ at VGS = 10 V.
The datasheet provides comprehensive electrical characteristics, including breakdown voltages, leakage currents, capacitance values, and switching times. It also includes typical performance graphs for on-resistance versus temperature and gate charge characteristics.
| Drain to Source Voltage (VDS) | 150 V |
|---|---|
| Continuous Drain Current (Package limited) | 16 A |
| Static Drain to Source On Resistance (Typical) | 51 mΩ |
| Power Dissipation (Ta = 25°C) | 2.5 W |
| Operating and Storage Junction Temperature Range | -55 to +150 °C |
The continuous drain current (silicon limited) at 25°C is 46 A.
Yes, the datasheet states that the product is RoHS Compliant.