The FDMS86322 is an N-Channel PowerTrench® MOSFET with a voltage rating of 80V and a current rating of 60A. It features a maximum on-state resistance of 7.65 mΩ at VGS = 10V, ID = 13A, and 12 mΩ at VGS = 6V, ID = 7.2A. The MOSFET is produced using Fairchild Semiconductor's advanced Power Trench® process, which minimizes on-state resistance and maintains superior switching performance.
This document is a datasheet for the Fairchild Semiconductor FDMS86322, an N-Channel PowerTrench MOSFET. It details the device's electrical characteristics, including maximum ratings for drain current and voltage, as well as thermal and switching parameters. The device is designed for applications such as DC-DC conversion and features a robust MSL1 package design.
| Drain to Source Voltage | 80 V |
|---|---|
| Continuous Drain Current (Package limited) | 60 A |
| Continuous Drain Current (Silicon limited) | 83 A |
| Continuous Drain Current (Ta = 25°C) | 13 A |
| Power Dissipation (Ta = 25°C) | 2.5 W |
| Operating and Storage Junction Temperature Range | -55 to +150 °C |
| Thermal Resistance, Junction to Case | 1.2 °C/W |
| Thermal Resistance, Junction to Ambient | 50 °C/W |
| Static Drain to Source On Resistance (Vgs=10V, Id=13A) | 7.65 mOhm |
The maximum continuous drain current is 60 A when package limited at 25°C.
The maximum drain to source voltage rating is 80 V.
The operating and storage junction temperature range is from -55 to +150 °C.