The FDMS9600S is a dual N-Channel PowerTrench® MOSFET. It is a 30V, 32A, 8.5mΩ MOSFET with low Qg high side MOSFET and low rDS(on) low side MOSFET. It has thermally efficient, dual Power56 package, pinout optimized, RoHS compliant etc.
The document describes the Fairchild Semiconductor FDMS9600S, a specialized dual N-Channel PowerTrench MOSFET designed for synchronous buck power stages. The device integrates two MOSFETs in a unique dual Power56 package to optimize efficiency and PCB utilization.
One channel (Q1) is an N-Channel MOSFET with low on-resistance, while the other (Q2) is a SyncFET optimized for low conduction loss. Key features include RoHS compliance, pinout optimization for simple design, and thermal efficiency suitable for notebook systems and point-of-load applications.
| Drain to Source Voltage (VDS) | 30 V |
|---|---|
| Continuous Drain Current (Package limited) Q1 | 32 A |
| Continuous Drain Current (Silicon limited) Q2 | 108 A |
| Thermal Resistance Junction to Ambient (Q1) | 50 C/W |
| Package Type | Power 56 |
The Q1 channel supports 32A and the Q2 channel supports 30A under these conditions.
The maximum rated voltage between the drain and source terminals is 30V.
The device operates and stores within a range of -55°C to +150°C.