FDMA3027PZ is a dual-channel power MOSFET with a maximum on-state resistance of 87 mΩ, a drain-source voltage of -30 V, and a drain current of -3.3 A. The device is packaged in MicroFET 2x2 mm, which offers exceptional thermal performance for its physical size and is well suited to linear mode applications. In addition, the device has HBM ESD protection.
The FDMA3027PZ is a dual P-Channel PowerTrench MOSFET designed as a single package solution for dual switching requirements, such as gate drivers for larger MOSFETs. It features two independent P-Channel MOSFETs with low on-state resistance to minimize conduction losses. The device is housed in a low-profile MicroFET 2x2 package offering exceptional thermal performance for its physical size and is suitable for linear mode applications.
| Package Type | MicroFET 2x2 |
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The device is designed for load switch and discrete gate driver applications.
Yes, the device is RoHS compliant.
The typical HBM ESD protection level is greater than 2 kV.