This is a document about FDMA430NZ Single N-Channel 2.5V Specified PowerTrench® MOSFET. The product has been designed using Fairchild Semiconductor's advanced Power Trench process to optimize the RDS(on) @VGS=2.5V on special MicroFET leadframe. It is suitable for applications such as Li-ion battery packs.
The document describes the Fairchild Semiconductor FDMA430NZ, a Single N-Channel MOSFET designed using the PowerTrench process. It is specified for a 2.5V gate drive voltage and is intended for applications such as Li-Ion battery packs. Key features include a maximum drain-source voltage of 30V, a continuous drain current of 5.0A, and an Rds(on) of 40mΩ at Vgs=2.5V.
| Drain-Source Voltage | 30 V |
|---|---|
| Gate-Source Voltage | +12 V |
| Pulsed Drain Current | 20 A |
| Operating Junction Temperature | -55 to +150 °C |
The maximum continuous drain current is 5.0A.
The maximum operating and storage junction temperature is +150°C.